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Beilstein J. Nanotechnol. 2014, 5, 726–734, doi:10.3762/bjnano.5.85
Figure 1: Schematic of a gas sensor.
Figure 2: FET-based structure for gas sensor with (a) CNT channel and (b) graphene channel.
Figure 3: Schematic of the NH3 sensing mechanism based on the gas adsorption phenomenon.
Figure 4: I–V characteristics of graphene and CNT after exposure to NH3 under F = 500 ppm at (a) T = 25 °C, (...
Figure 5: I–V characteristics after exposure to NH3 for graphene and CNT at T = 200 °C and under (a) F = 100 ...
Beilstein J. Nanotechnol. 2014, 5, 603–609, doi:10.3762/bjnano.5.71
Figure 1: A schematic of a graphene-based EGFET including the bias configuration (three-electrode electrochem...
Figure 2: A cross-section of graphene-based electrolyte-gated field effect transistor, together with the equi...
Figure 3: The proposed model of quantum capacitance of EGFETs based single-layer graphene.
Figure 4: A flowchart of ACO-based algorithm for optimizing the quantum capacitance model.
Figure 5: Comparison between the proposed single-layer graphene quantum capacitance model, the optimized prop...
Figure 6: The convergence profile of the optimization of the proposed model using ACO technique.